Author Affiliations
Abstract
1 Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
2 Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
3 Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan
An efficient monolithically integrated laser on Si remains the missing component to enable Si photonics. We discuss the design and fabrication of suspended and tensile-strained Ge/SiGe multiple quantum well microdisk resonators on Si for laser applications in Si photonics using an all-around SiNx stressor. An etch-stop technique in the Ge/SiGe system is demonstrated and allows the capability of removing the defective buffer layer as well as providing precise thickness control of the resonators. Photoluminescence and Raman spectroscopy indicate that we have achieved a biaxial tensile strain shift as high as 0.88% in the microdisk resonators by adding a high-stress SiNx layer. Optical gain calculations show that high positive net gain can be achieved in Ge quantum wells with 1% external biaxial tensile strain.
(250.5590) Quantum-well -wire and -dot devices (250.5230) Photoluminescence (310.1860) Deposition and fabrication (160.6000) Semiconductor materials. Photonics Research
2017, 5(6): 060000B7
1 Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
2 Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
Si photonics germanium (Ge) tensile strained photoluminescence (PL) Frontiers of Optoelectronics
2012, 5(1): 112
1 Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
2 Quantum Science Research, Hewlett-Packard Laboratories, Palo Alto, CA 94304, USA
3 Tyndall National Institute, Lee Maltings, Photonics Building, Cork, Ireland
4 Photonics and Microwave Engineering Royal Institute of Technology Kista, Stockholm S-164 40, Sweden
electroabsorption effect Ge optical interconnections optical modulators quantum-confined Stark effect (QCSE) Ge/SiGe quantum wells (QWs) Frontiers of Optoelectronics
2012, 5(1): 82